Storing Data: To write data, a high voltage (around 15-20V) is applied to the control gate above the floating gate. This causes electrons from the transistor’s channel (the substrate) to “tunnel” through the thin oxide barrier via a quantum mechanical process called Fowler-Nordheim tunneling. The electrons get trapped in the floating gate, creating a negative charge. The presence and amount of this charge shift the cell’s threshold voltage—the voltage needed to turn the transistor on during a read operation.
饮料帝国渐入黄昏，统一需要加速蜕变食品业务的回暖算得上一场精心策划的突围，而饮料板块的停滞则更像是一场无法回避的“中年危机”。
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- Cards: subtle shadows, not borders
В двух аэропортах на юге России ввели ограничения на полеты14:55